Procédé de fabrication d'une couche mince en nitrure de gallium monocristalline
| N° de brevet: |
EP1900857 (A1) |
| Date de publication: |
2008-03-19 |
| Inventeur(s): |
SHIN HYUN MIN [KR];KONG SUN HWAN [KR];LEE KI SOO [KR];CHOI JUN SUNG [KR]; |
| Demandeur(s): |
SAMSUNG CORNING CO LTD [KR]; |
| Classification: |
C30B25/18;C30B29/40; |
| N° de demande: |
EP20070109755 20070606 |
| Numéro(s) de priorité: |
KR20060089040 20060914 |
A method of manufacturing a single crystalline gallium nitride (GaN) thick film by using a hydride gas phase epitaxy (HVPE), more particularly, the method of manufacturing c-plane ({0001}) of a single crystalline GaN thick film by using the HVPE. A GaN film is grown on a substrate by providing a hydrogen chloride (HCl) gas and an ammonia (NH 3 ) gas, thereby obtaining the GaN film on the substrate, and a GaN thick film on the GaN film on the substrate is grown.
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