The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient Äf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant µr is 39. According to the invention, when, in La-Pr-Al-Ga-Sr-Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La 1-y Ln y )(Al 1-z Ga z )O 3 -x(Sr 1-m Ca m )TiO 3 solid solution as a main phase, in which a solid solution of Al-Ga-Sr-based oxide and/or a solid solution of Al-Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.