Procédé de fabrication de silicium granulaire dépourvu de poussière

N° de brevet: EP1900686 (A1)
Date de publication: 2008-03-19
Inventeur(s): IBRAHIM JAMEEL [US];IVEY MELINDA GAYLE [US];TRUONG TIMOTHY DINH [US];
Demandeur(s): MEMC ELECTRONIC MATERIALS [US];
Classification: C01B33/02;C01B33/027;C23C16/24;C23C16/44;
N° de demande: EP20070120116 20051110 
Numéro(s) de priorité: EP20050851459 20051110;US20040988179 20041112 
A method of making a high-purity semiconductor grade granular silicon composition is disclosed. Commercial quantities of the granular silicon can be produced by depositing silicon on silicon seeds in a first chemical vapor deposition (CVD)reactor, thereby growing the seeds into larger secondary seeds. Additional silicon is deposited on the secondary seeds in a second CVD reactor by flowing a gas comprising at least about 7 mole percent of a silicon compound through the second reactor. Dust is reduced in a third reactor. The methods disclosed herein can be used to achieve higher throughput and better yield than conventional practices.

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