Poudre ITO et son procédé de fabrication, matériau de revêtement pour film ITO électroconducteur, et film électroconducteur transparent
| N° de brevet: |
EP1894891 (A2) |
| Date de publication: |
2008-03-05 |
| Inventeur(s): |
TANOUE KOJI [JP];KONNO SHINICHI [JP];HINOTSU TAKASHI [JP]; |
| Demandeur(s): |
DOWA ELECTRONICS MATERIALS CO [JP]; |
| Classification: |
C01G19/00; |
| N° de demande: |
EP20070006442 20070328 |
| Numéro(s) de priorité: |
JP20060230635 20060828 |
The change in resistance over time of a low-resistance acicular ITO powder is reduced, and the stability of the ITO powder in ambient air is improved. Tin-containing indium hydroxide baked in an atmosphere of an inert gas and reducing gas is processed for a predetermined time under a water-containing atmosphere of inert gas and/or reducing gas at a temperature of 0°C or greater and 100°C or less, and is then exposed to air.
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