FACE ARRIERE A MATRICE ACTIVE POUR LA COMMANDE D'ELEMENTS CONTROLES ET SON PROCEDE DE FABRICATION

N° de brevet: EP1568069 (A2)
Date de publication: 2005-08-31
Inventeur(s): BRODY THOMAS P [US];MALMBERG PAUL R [US];STAPLETON ROBERT E DI [US];
Demandeur(s): ADVANTECH GLOBAL LTD [VG];
Classification: H01L21/00;H01L21/84;H01L29/786;C23C14/04;C23C14/56;H01L21/336;H01L27/12;H01L51/50;H05B33/10;
N° de demande: EP20030781279 20030519 
Numéro(s) de priorité: WO2003US15682 20030519;US20020386525P 20020605;US20020255972 20020926 
The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of grown-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of grown-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This invented Cu material has a more excellent performance than existing ones. The tensile yield strength and ultimate strength of the present Cu material at room-temperature can be as high as 900 MPa and 1086 MPa, respectively, and such a high tensile strength cannot be achieved for Cu materials with the same chemical composition prepared by any traditional methods. Meanwhile, the present Cu sample also keeps a good electrical conductivity, for example, the room-temperature resistivity is (1.75+/-0.02) x 10 -8 OMEGA .m, corresponding to 96% IACS, which is close to that of conventional coarse-grained Cu. <IMAGE>

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