CRISTAL SiGe
| N° de brevet: |
EP1052222 (A1) |
| Date de publication: |
2000-11-15 |
| Inventeur(s): |
ABE TAKAO [JP];YONENAGA ICHIRO [JP];IGARASHI TETSUYA [JP]; |
| Demandeur(s): |
SHINETSU HANDOTAI KK [JP]; |
| Classification: |
C30B15/00; |
| N° de demande: |
EP19990954399 19991105 |
| Numéro(s) de priorité: |
WO1999JP06168 19991105;JP19980335894 19981126 |
Résumé dans la langue de publication Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5 X 10**-5 mm**3 or more in size.
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